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来自MSN
4 个月
助力3D NAND突破1000层,泛林集团推出第三代低温电介质蚀刻技术
1,000 层的 3D NAND面临的挑战 随着我们即将迎来以人工智能 (AI) 崛起为标志的新科技时代,对更先进计算能力的需求也急剧上升。数据密集型 AI 应用 ...
8 天
on MSN
三星3D NAND生产大突破:光刻胶用量减半,年省成本可达数十亿韩元
三星电子在3D NAND闪存生产领域取得了引人瞩目的技术进展。据韩媒The Elec最新报道,这家科技巨头在光刻工艺上实现了重大革新,成功将光刻胶(PR)的使用量减半。 报道指出,在以往的3D ...
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