This, in turn, necessitates controllability over the etching process at the atomic-layer (angstrom) level. In addition, the likes of 3D-NAND(4) and 3D-DRAM*5structures are used for semiconductor ...
This, in turn, necessitates controllability over the etching process at the atomic-layer (angstrom) level. In addition, the likes of 3D-NAND(4) and 3D-DRAM*5structures are used for semiconductor ...
SK Hynix has reportedly begun mass production of its 321-layer 1Tb TLC 3D NAND Flash products, posing a potential threat to Samsung Electronics' (Samsung) leading position. This development is ...
A technical paper titled “Detection of defective chips from nanostructures with a high-aspect ratio using hyperspectral imaging and deep learning” was published by researchers at Samsung Electronics.
Future dividend payments are subject to review and approval by the Board of Directors. Lam Research Corp. (Nasdaq: LRCX) today extended its leadership in 3D NAND flash memory etching with the ...
Developed a "Square Silicon Substrate" for Semiconductor Packages - 600 mm-square rectangular silicon substrate, one of the world's largest - Mitsubishi Materials Corporation ("MMC") has developed ...